CTLDM7590 surface mount p-channel enhancement-mode silicon mosfet description: the central semiconductor CTLDM7590 is an enhancement-mode p-channel mosfet designed for applications including high speed pulsed amplifiers and drivers. this mosfet has beneficially low r ds(on) , low threshold voltage, and very low gate charge characteristics. marking code: 2 applications: ? load/power switches ? boost/buck converters ? battery charging/power management features: ? esd protection up to 2kv ? power dissipation: 125mw ? low r ds(on) ? low threshold voltage ? ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm tlm tm leadless surface mount package maximum ratings: (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 140 ma pulsed drain current, tp=10s i d 600 ma power dissipation p d 125 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 1000 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =5.0v, v ds =0 100 na i dss v ds =5.0v, v gs =0 50 na i dss v ds =16v, v gs =0 100 na bv dss v gs =0, i d =250a 20 v v gs(th) v ds =v gs, i d =250a 0.4 1.0 v r ds(on) v gs =4.5v, i d =100ma 4.0 5.0 r ds(on) v gs =2.5v, i d =50ma 5.5 7.0 r ds(on) v gs =1.8v, i d =20ma 8.0 10 r ds(on) v gs =1.5v, i d =10ma 11 17 r ds(on) v gs =1.2v, i d =1.0ma 20 q g(tot) v ds =10v, v gs =4.5v, i d =100ma 0.50 nc q gs v ds =10v, v gs =4.5v, i d =100ma 0.17 nc q gd v ds =10v, v gs =4.5v, i d =100ma 0.11 nc g fs v ds =5.0v, i d =125ma 140 ms c rss v ds =15v, v gs =0, f=1.0mhz 4.0 pf c iss v ds =15v, v gs =0, f=1.0mhz 10 pf c oss v ds =15v, v gs =0, f=1.0mhz 3.7 pf t on v dd =10v, v gs =4.5v, i d =200ma 35 ns t off v dd =10v, v gs =4.5v, i d =200ma 100 ns tlm3d6d8 case r3 (21-september 2012) www.centralsemi.com
CTLDM7590 surface mount p-channel enhancement-mode silicon mosfet lead code: 1) gate 2) source 3) drain marking code: 2 pin configuration (bottom view) tlm3d6d8 case - mechanical outline www.centralsemi.com r3 (21-september 2012)
CTLDM7590 surface mount p-channel enhancement-mode silicon mosfet typical electrical characteristics r3 (21-september 2012) www.centralsemi.com
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